Fractional and unquantized dc voltage generation in THz-driven
        semiconductor superlattices

dc.contributor.author	Alekseev, Kirill N	en_US
dc.contributor.author	Cannon, Ethan H	en_US
dc.contributor.author	Kusmartsev, Feodor V	en_US
dc.contributor.author	Campbell, David K	en_US
dc.date.accessioned	2009-04-13T18:52:34Z
dc.date.available	2009-04-13T18:52:34Z
dc.date.issued	2001-03-29	en_US
dc.identifier.citation	2001. "Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices," cond-mat/0103608. http://arxiv.org/abs/cond-mat/0103608	en_US
dc.identifier.other	Europhysics Letters 56 (2001) 842; Erratum: 68 (2004) 753	en_US
dc.identifier.uri	http://arxiv.org/abs/cond-mat/0103608	en_US
dc.identifier.uri	doi:10.1209/epl/i2001-00596-9	en_US
dc.identifier.uri	http://hdl.handle.net/2144/984
dc.description.abstract	We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.	en_US
dc.relation.ispartof	cond-mat/0103608	en_US
dc.title	Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices	en_US
dc.type	article	en_US