Studies of nanostructure fabrication and morphology development during ion bombardment as a function of bombardment angle
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In order to investigate the behavior of nanostructures during the widely-used process of ion bombardment, the mechanisms of ion bombardment on nanostructures were studied. Nanostructures were fabricated into silicon wafers. The fabrication process involved writing with scanning electron microscopy (SEM) a pattern in poly(methyl methacrylate) (PMMA) polymer resist layered over the silicon, removing the written PMMA in development with methyl isobutyl ketone (MIBK) and isopropanol, layering the wafer with chromium in thermal evaporation, removing the PMMA and its chromium covering with acetone, etching the chromium of the pattern with reactive ion etching, and finally removing the chromium with an etching reagent. The final structures were ion bombarded under 3*10^-3 torr for three hours at 1000 V and 40mA, with Argon; the bombarding was performed at degree angles of 60 and normal incidence. A sample without the fabrication of structures is bombarded at normal incidence as well. One sample with fabricated structures is studied without bombardment as an experimental control. The results were erosion of the bombarded structures, cones and dots.
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