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dc.contributor.authorWang, Xuanyeen_US
dc.contributor.authorChristopher, Jason W.en_US
dc.contributor.authorSwan, Anna K.en_US
dc.date.accessioned2018-10-09T17:49:06Z
dc.date.available2018-10-09T17:49:06Z
dc.date.issued2017-10-19
dc.identifierhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000413190900018&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=6e74115fe3da270499c3d65c9b17d654
dc.identifier.citationXuanye Wang, Jason W Christopher, Anna K Swan. 2017. "2D Raman band splitting in graphene: Charge screening and lifting of the K-point Kohn anomaly." SCIENTIFIC REPORTS, v. 7, pp. ? - ? (9). https://doi.org/10.1038/s41598-017-13769-3
dc.identifier.issn2045-2322
dc.identifier.urihttps://hdl.handle.net/2144/31459
dc.description.abstractPristine graphene encapsulated in hexagonal boron nitride has transport properties rivalling suspended graphene, while being protected from contamination and mechanical damage. For high quality devices, it is important to avoid and monitor accidental doping and charge fluctuations. The 2D Raman double peak in intrinsic graphene can be used to optically determine charge density, with decreasing peak split corresponding to increasing charge density. We find strong correlations between the 2D 1 and 2D 2 split vs 2D line widths, intensities, and peak positions. Charge density fluctuations can be measured with orders of magnitude higher precision than previously accomplished using the G-band shift with charge. The two 2D intrinsic peaks can be associated with the “inner” and “outer” Raman scattering processes, with the counterintuitive assignment of the phonon closer to the K point in the KM direction (outer process) as the higher energy peak. Even low charge screening lifts the phonon Kohn anomaly near the K point for graphene encapsulated in hBN, and shifts the dominant intensity from the lower to the higher energy peak.en_US
dc.description.sponsorshipThis work was supported by the United States National Science Foundation (DMR 1411008, DMR 1308659). J.C. thanks the Department of Defence (DoD), Air Force Office of Scientific Research for its support through the National Defence Science and Engineering Graduate (NDSEG) Fellowship, 32 CFR 168a. The authors would like to thank Cory Dean and Carlos Forsythe for the graphene encapsulated hBN sample. (DMR 1411008 - United States National Science Foundation; DMR 1308659 - United States National Science Foundation; 32 CFR 168a - Department of Defence (DoD), Air Force Office of Scientific Research through the National Defence Science and Engineering Graduate (NDSEG) Fellowship)en_US
dc.format.extent9 p.en_US
dc.languageEnglish
dc.publisherNATURE PUBLISHING GROUPen_US
dc.relation.ispartofSCIENTIFIC REPORTS
dc.relation.isversionofhttps://doi.org/10.1038/s41598-017-13769-3
dc.rightsAttribution 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectScience & technologyen_US
dc.subjectMultidisciplinary sciencesen_US
dc.subjectFreestanding grapheneen_US
dc.subjectBoron-nitrideen_US
dc.subjectLine-shapeen_US
dc.subjectSpectroscopyen_US
dc.subjectHeterostructuresen_US
dc.subjectMonolayersen_US
dc.subjectNanotubesen_US
dc.title2D Raman band splitting in graphene: charge screening and lifting of the K-point Kohn anomalyen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-017-13769-3
pubs.elements-sourceweb-of-scienceen_US
pubs.notesEmbargo: Not knownen_US
pubs.organisational-groupBoston Universityen_US
pubs.organisational-groupBoston University, College of Engineeringen_US
pubs.organisational-groupBoston University, College of Engineering, Department of Electrical & Computer Engineeringen_US
pubs.publication-statusPublisheden_US
dc.identifier.orcid0000-0002-3978-7993 (Swan, Anna K)


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Except where otherwise noted, this item's license is described as Attribution 4.0 International