Electron-electron relaxation effect on Auger recombination in direct-band semiconductors
Zegrya, George G.
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Citation (published version)A Polkovnikov, G Zegrya. 2001. "Electron-electron relaxation effect on Auger recombination in direct-band semiconductors." PHYSICAL REVIEW B, Volume 64, Issue 7, pp. ? - ? (4). https://doi.org/10.1103/PhysRevB.64.073205
Influence of electron-electron relaxation processes on Auger recombination rate in direct band semiconductors is investigated. Comparison between carrier-carrier and carrier-phonon relaxation processes is provided. It is shown that relaxation processes are essential if the free path length of carriers does not exceed a certain critical value, which exponentially increases with temperature. For illustration of obtained results a typical InGaAsP compound is used.
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