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dc.contributor.authorChristopher, Jason W.en_US
dc.contributor.authorVutukuru, Mounikaen_US
dc.contributor.authorLloyd, Daviden_US
dc.contributor.authorBunch, J. Scotten_US
dc.contributor.authorGoldberg, Bennett B.en_US
dc.contributor.authorBishop, David J.en_US
dc.contributor.authorSwan, Anna K.en_US
dc.date.accessioned2020-01-14T15:27:20Z
dc.date.available2020-01-14T15:27:20Z
dc.date.issued2019-04
dc.identifier.citationJason W Christopher, Mounika Vutukuru, David Lloyd, J Scott Bunch, Bennett B Goldberg, David J Bishop, Anna K Swan. 2019. "Monolayer MoS2 Strained to 1.3% With a Microelectromechanical System." Journal of Microelectromechanical Systems, Volume 28, Issue 2, pp. 254 - 263. https://doi.org/10.1109/jmems.2018.2877983
dc.identifier.issn1057-7157
dc.identifier.issn1941-0158
dc.identifier.urihttps://hdl.handle.net/2144/39092
dc.description.abstractWe report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS, while still providing precise positioning and crack free transfer of flakes. Further, our method used the transfer polymer to anchor the 2D crystal to the MEMS, which reduces the fabrication time, increases the yield, and allowed us to exploit the strong mechanical coupling between 2D crystal and polymer to strain the atomically thin system. We successfully strained single atomic layers of molybdenum disulfide (MoS2) with MEMS devices for the first time and achieved greater than 1.3% strain, marking a major milestone for incorporating 2D materials with MEMS We used the established strain response of MoS2 Raman and Photoluminescence spectra to deduce the strain in our crystals and provide a consistency check. We found good comparison between our experiment and literature.en_US
dc.format.extentp. 254 - 263en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.ispartofJournal of Microelectromechanical Systems
dc.subjectMEMSen_US
dc.subjectMonolayer MoS2en_US
dc.subjectStrainen_US
dc.subjectRamanen_US
dc.subjectPhotoluminescenceen_US
dc.subjectNanoscience & nanotechnologyen_US
dc.subjectElectrical and electronic engineeringen_US
dc.subjectMechanical engineeringen_US
dc.subjectManufacturing engineeringen_US
dc.titleMonolayer MoS2 strained to 1.3% with a microelectromechanical systemen_US
dc.typeArticleen_US
dc.description.versionPublished versionen_US
dc.identifier.doi10.1109/jmems.2018.2877983
pubs.elements-sourcecrossrefen_US
pubs.notesEmbargo: Not knownen_US
pubs.organisational-groupBoston Universityen_US
pubs.organisational-groupBoston University, College of Arts & Sciencesen_US
pubs.organisational-groupBoston University, College of Arts & Sciences, Department of Physicsen_US
pubs.organisational-groupBoston University, College of Engineeringen_US
pubs.organisational-groupBoston University, College of Engineering, Department of Electrical & Computer Engineeringen_US
pubs.organisational-groupBoston University, College of Engineering, Department of Mechanical Engineeringen_US
pubs.publication-statusPublisheden_US
dc.identifier.orcid0000-0002-3978-7993 (Swan, Anna K)
dc.identifier.mycv456035


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