Memory effects in monolayer group-IV monochalcoginides
Hanakata, Paul Z.
Park, Harold S.
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Citation (published version)Paul Z Hanakata, Alexandra Carvalho, D. Campbell, Harold S Park. 2016. "Memory Effects in Monolayer Group-IV Monochalcoginides." Physical review B: Condensed matter and materials physics, Volume 94, https://doi.org/10.1103/PhysRevB.94.035304
Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer SnS and GeSe, two prototype materials where the direction of the puckering can be switched by application of tensile stress or electric field. Furthermore, the two inequivalent valleys in momentum space, which are dictated by the puckering orientation, can be excited selectively using linearly polarized light, and this provides an additional tool to identify the polarization direction. Our findings suggest that SnS and GeSe monolayers may have observable ferroelectricity and multistability, with potential applications in information storage.
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