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dc.contributor.authorChen, Zhuofaen_US
dc.contributor.authorUllberg, Nathanen_US
dc.contributor.authorVutukuru, Mounikaen_US
dc.contributor.authorBarton, Daviden_US
dc.contributor.authorSwan, Annaen_US
dc.date.accessioned2020-05-01T14:52:08Z
dc.date.available2020-05-01T14:52:08Z
dc.date.issued2019-08-28
dc.identifier.citationZhuofa Chen, Nathan Ullberg, Mounika Vutukuru, David Barton, Anna Swan. 2019. "Monitoring the low doping regime in graphene using Raman 2D peak-splits: Comparison of gated Raman and transport measurements." ArXiv, Volume arXiv:1908.10961 [physics.app-ph], https://arxiv.org/abs/1908.10961
dc.identifier.urihttps://hdl.handle.net/2144/40497
dc.description.abstractAvoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are labor-intensive and time-consuming. Existing optical methods using Raman spectroscopy only work for doping levels higher than ~10^12 cm^-2. Here, we propose an optical method using Raman 2D peak-splitting (split between the Raman 2D1 and 2D2 peaks at low doping levels). Electrostatically gated Raman measurements combined with transport measurements were used to correlate the 2D peak-split with the charge density on graphene with high precision (2x10^10 cm^-2 per 2D peak-split wavenumber). We found that the Raman 2D peak-split has a strong correlation with the charge density at low doping levels, and that a lower charge density results in a larger 2D peak-split. Our work provides a simple and non-invasive optical method to quantify the doping level of graphene from 10^10 cm^-2 to 10^12 cm^-2, two orders of magnitude higher precision than previously reported optical methods. This method provides a platform for estimating the doping level and quality of graphene before fabricating graphene devicesen_US
dc.description.urihttps://arxiv.org/abs/1908.10961
dc.language.isoen_US
dc.publisherarXiven_US
dc.subjectGrapheneen_US
dc.subjectRaman spectroscopyen_US
dc.subjectMonitor doping of grapheneen_US
dc.subject2D-mode spliten_US
dc.subjectTransport in grapheneen_US
dc.subjectGraphene on OTMSen_US
dc.titleMonitoring the low doping regime in graphene using Raman 2D peak-splits: Comparison of gated Raman and transport measurementsen_US
dc.typeArticleen_US
pubs.elements-sourcemanual-entryen_US
pubs.notesEmbargo: Not knownen_US
pubs.organisational-groupBoston Universityen_US
pubs.organisational-groupBoston University, College of Engineeringen_US
pubs.organisational-groupBoston University, College of Engineering, Department of Electrical & Computer Engineeringen_US
pubs.publication-statusSubmitteden_US
dc.identifier.orcid0000-0002-3978-7993 (Swan, Anna)
dc.description.oaversionFirst author draft
dc.identifier.mycv523440


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