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dc.contributor.authorLin, Yidaen_US
dc.contributor.authorGao, Tinaen_US
dc.contributor.authorPan, Xiaoyunen_US
dc.contributor.authorKamenetska, Mariaen_US
dc.contributor.authorThon, Susanna M.en_US
dc.coverage.spatialGermanyen_US
dc.date.accessioned2020-05-01T16:07:02Z
dc.date.available2020-05-01T16:07:02Z
dc.date.issued2020-03
dc.identifierhttps://www.ncbi.nlm.nih.gov/pubmed/32009274
dc.identifier.citationYida Lin, Tina Gao, Xiaoyun Pan, Maria Kamenetska, Susanna M Thon. 2020. "Local Defects in Colloidal Quantum Dot Thin Films Measured via Spatially Resolved Multi-Modal Optoelectronic Spectroscopy.." Adv Mater, Volume 32, Issue 11, pp. e1906602 - ?. https://doi.org/10.1002/adma.201906602
dc.identifier.issn1521-4095
dc.identifier.urihttps://hdl.handle.net/2144/40502
dc.description.abstractThe morphology, chemical composition, and electronic uniformity of thin-film solution-processed optoelectronics are believed to greatly affect device performance. Although scanning probe microscopies can address variations on the micrometer scale, the field of view is still limited to well under the typical device area, as well as the size of extrinsic defects introduced during fabrication. Herein, a micrometer-resolution 2D characterization method with millimeter-scale field of view is demonstrated, which simultaneously collects photoluminescence spectra, photocurrent transients, and photovoltage transients. This high-resolution morphology mapping is used to quantify the distribution and strength of the local optoelectronic property variations in colloidal quantum dot solar cells due to film defects, physical damage, and contaminants across nearly the entire test device area, and the extent to which these variations account for overall performance losses. It is found that macroscopic defects have effects that are confined to their localized areas, rarely prove fatal for device performance, and are largely not responsible for device shunting. Moreover, quantitative analysis based on statistical partitioning methods of such data is used to show how defect identification can be automated while identifying variations in underlying properties such as mobilities and recombination strengths and the mechanisms by which they govern device behavior.en_US
dc.description.sponsorshipDMR-1807342 - National Science Foundation; Hopkins Extreme Materials Instituteen_US
dc.format.extente1906602 - ?en_US
dc.languageeng
dc.language.isoen_US
dc.relation.ispartofAdv Mater
dc.subjectColloidal quantum dotsen_US
dc.subjectDefect characterizationen_US
dc.subjectMacroscopic profilingen_US
dc.subjectScanning microscopyen_US
dc.subjectSolar cellsen_US
dc.subjectNanoscience & nanotechnologyen_US
dc.subjectPhysical sciencesen_US
dc.subjectChemical sciencesen_US
dc.subjectEngineeringen_US
dc.titleLocal Defects in colloidal quantum dot thin films measured via spatially resolved multi-modal optoelectronic spectroscopy.en_US
dc.typeArticleen_US
dc.description.versionAccepted manuscripten_US
dc.identifier.doi10.1002/adma.201906602
pubs.elements-sourcepubmeden_US
pubs.notesEmbargo: Not knownen_US
pubs.organisational-groupBoston Universityen_US
pubs.organisational-groupBoston University, College of Arts & Sciencesen_US
pubs.organisational-groupBoston University, College of Arts & Sciences, Department of Chemistryen_US
pubs.publication-statusPublisheden_US
dc.date.online2020-02-03
dc.identifier.mycv523749


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