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dc.contributor.advisorLudwig, Jr, Karl F.en_US
dc.contributor.advisorCole, Danielen_US
dc.contributor.authorYang, Zijingen_US
dc.date.accessioned2020-05-08T15:36:01Z
dc.date.available2020-05-08T15:36:01Z
dc.date.issued2020
dc.identifier.urihttps://hdl.handle.net/2144/40709
dc.description.abstractThis thesis examines the nanoscale morphology evolution during AlN and InN thin film growth. We used synchrotron-based real-time grazing-incidence small-angle X-ray scattering (GISAXS), in order to study the plasma-assisted atomic layer epitaxy (ALEp) process. The substrate for deposition was single-crystal GaN. We designed the load lock and other parts for the experiment, then performed experiments at the National Synchrotron Light Source-II of Brookhaven National Laboratory. Post-facto X-ray Diffraction (XRD), X-ray Reflection (XRR), Scanning Electron Microscope (SEM), Energy-dispersive X-ray Spectroscopy (EDS), and Transmission Electron Microscopy (TEM) were performed at Boston University. In addition, Kinetic Monte Carlo (KMC) simulations were performed to compare with the synchrotron x-ray studiesen_US
dc.language.isoen_US
dc.subjectMaterials scienceen_US
dc.titleStudies of a group III nitrides thin film growthen_US
dc.typeThesis/Dissertationen_US
dc.date.updated2020-05-07T22:01:57Z
etd.degree.nameMaster of Scienceen_US
etd.degree.levelmastersen_US
etd.degree.disciplineMaterials Science & Engineeringen_US
etd.degree.grantorBoston Universityen_US
dc.identifier.orcid0000-0002-9836-6945


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