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dc.contributor.advisorLing, Xien_US
dc.contributor.authorRen, Haoqien_US
dc.date.accessioned2021-05-26T18:46:13Z
dc.date.available2021-05-26T18:46:13Z
dc.date.issued2021
dc.identifier.urihttps://hdl.handle.net/2144/42607
dc.description.abstractTransition metal borides (labeled as MBenes) nanosheets, an emerging family of two dimensional (2D) materials, is considered promising in the fields of electrocatalysis, ion batteries and superconductors, despite only a few MBenes have been successfully prepared. Thus, expanding the landscape of 2D metal borides is of great importance. However, developing facile methods for ultrathin crystalline MBenes with satisfactory lateral dimension for electronic devices is still highly desirable due to the difficulties in the traditional synthesis approaches such as chemical vapor deposition (CVD) and mechanical exfoliation. Hereby, we focus on the preparation of metal borides with a simple atomic substitution method. In this project, we use ultrathin materials including Mo5N6 and exfoliated MoS2 as well as WS2 as precursor and B/B2O3 powder as boron sources. By this method, we obtain various ultrathin crystalline metal borides without damaging the original morphology. Additionally, we also demonstrate the achievement of B-doping metal dichalcogenides and nitrides by partial substitution through controlling the reaction time and temperature. We believe this method will give a new insight on how to obtain various ultrathin high crystalline metal borides by simply boronizing different precursorsen_US
dc.language.isoen_US
dc.subjectMaterials scienceen_US
dc.titleUltrathin crystalline metal borides synthesized by atomic substitutionen_US
dc.typeThesis/Dissertationen_US
dc.date.updated2021-05-15T07:03:42Z
etd.degree.nameMaster of Scienceen_US
etd.degree.levelmastersen_US
etd.degree.disciplineMaterials Science & Engineeringen_US
etd.degree.grantorBoston Universityen_US


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