Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

Date Issued
2001-03-29Author
Alekseev, Kirill N.
Cannon, Ethan H.
Kusmartsev, Feodor V.
Campbell, David K.
Metadata
Show full item recordPermanent Link
http://arxiv.org/abs/cond-mat/0103608doi:10.1209/epl/i2001-00596-9
https://hdl.handle.net/2144/984
Citation
2001. "Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices," cond-mat/0103608. http://arxiv.org/abs/cond-mat/0103608Abstract
We consider the spontaneous creation of a dc voltage across a strongly
coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage
may be approximately proportional either to an integer or to a half- integer multiple of the
frequency of the applied ac field, depending on the ratio of the characteristic scattering
rates of conducting electrons. For the case of an ac field frequency less than the
characteristic scattering rates, we demonstrate the generation of an unquantized dc
voltage.