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dc.contributor.authorAlekseev, Kirill N.en_US
dc.contributor.authorCannon, Ethan H.en_US
dc.contributor.authorKusmartsev, Feodor V.en_US
dc.contributor.authorCampbell, David K.en_US
dc.date.accessioned2009-04-13T18:52:34Z
dc.date.available2009-04-13T18:52:34Z
dc.date.issued2001-03-29
dc.identifier.citation2001. "Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices," cond-mat/0103608. http://arxiv.org/abs/cond-mat/0103608
dc.identifier.otherEurophysics Letters 56 (2001) 842; Erratum: 68 (2004) 753
dc.identifier.urihttp://arxiv.org/abs/cond-mat/0103608
dc.identifier.uridoi:10.1209/epl/i2001-00596-9
dc.identifier.urihttps://hdl.handle.net/2144/984
dc.description.abstractWe consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.en_US
dc.relation.ispartofcond-mat/0103608
dc.titleFractional and unquantized dc voltage generation in THz-driven semiconductor superlatticesen_US
dc.typeArticleen_US


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