Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices

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Date
2001-03-29
DOI
Authors
Alekseev, Kirill N.
Cannon, Ethan H.
Kusmartsev, Feodor V.
Campbell, David K.
Version
URI
http://arxiv.org/abs/cond-mat/0103608
 doi:10.1209/epl/i2001-00596-9
 https://hdl.handle.net/2144/984
OA Version
Citation
2001. "Fractional and unquantized dc voltage generation in THz-driven semiconductor superlattices," cond-mat/0103608. http://arxiv.org/abs/cond-mat/0103608
Abstract
We consider the spontaneous creation of a dc voltage across a strongly coupled semiconductor superlattice subjected to THz radiation. We show that the dc voltage may be approximately proportional either to an integer or to a half- integer multiple of the frequency of the applied ac field, depending on the ratio of the characteristic scattering rates of conducting electrons. For the case of an ac field frequency less than the characteristic scattering rates, we demonstrate the generation of an unquantized dc voltage.
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ENG: Electrical and Computer Engineering: Scholarly Papers