Broadband repeatable <0.025 dB average loss rapid adiabatic based 3-dB coupler in a 45 nm SOI CMOS process

Fargas Cabanillas, Josep M.Bappi, GolamKita, Derek M.Van Orden, DerekKhilo, AnatolSedgwick, ForrestFini, JohnPopović, Miloš A.Wade, Mark T.2022-09-222022-09-222021J.M. Fargas Cabanillas, G. Bappi, D.M. Kita, D. Van Orden, A. Khilo, F. Sedgwick, J. Fini, M.A. Popović, M.T. Wade. 2021. "Broadband Repeatable <0.025 dB Average Loss Rapid Adiabatic Based 3-dB Coupler in a 45 nm SOI CMOS Process." OSA Advanced Photonics Congress 2021. Integrated Photonics Research, Silicon and Nanophotonics. 2021 - https://doi.org/10.1364/iprsn.2021.jth3a.3https://hdl.handle.net/2144/45160We demonstrate a 75 µm-long rapid adiabatic coupler (RAC) with an average insertion loss <0.025 dB/coupler and an average power splitting ratio of 50±1.09% over 40 nm bandwidth and 68 reticles across a 300 mm 45 nm SOI CMOS wafer.en-US© 2021 The Author(s).Broadband repeatable <0.025 dB average loss rapid adiabatic based 3-dB coupler in a 45 nm SOI CMOS processConference materials10.1364/iprsn.2021.jth3a.3743228