Doganov, Rostislav A.O'Farrell, Eoin C.T.Koenig, Steven P.Yeo, YutingZiletti, AngeloCarvalho, AlexandraCampbell, David K.Coker, David F.Watanabe, KenjiTaniguchi, TakashiCastro Neto, Antonio H.Ozyilmaz, Barbaros2020-04-272020-04-272015-04-01Rostislav A. Doganov, Eoin C.T. O'Farrell, Steven P. Koenig, Yuting Yeo, Angelo Ziletti, Alexandra Carvalho, David K. Campbell, David F. Coker, Kenji Watanabe, Takashi Taniguchi, Antonio H. Castro Neto, Barbaros Ozyilmaz. 2015. "Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere." NATURE COMMUNICATIONS, Volume 6. https://doi.org/10.1038/ncomms76472041-1723https://hdl.handle.net/2144/40361Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.7 pagesen-USCopyright © 2015, Springer Nature. The final published version of this article appears in OpenBU by permission of the publisher.Science & technologyMultidisciplinary sciencesField-effect transistorsHigh-pressuresGrapheneElectronicsCrystalsMobilityMoS2Article10.1038/ncomms76470000-0002-4502-5629 (Campbell, David K)39851