Rapid adiabatic 3 dB coupler with 50±1% splitting over 200 nm including S, C and L bands in 45 nm CMOS platform

Fargas Cabanillas, Josep M.Onural, DenizPopović, Miloš A.2022-09-222022-09-222021J.M.F. Cabanillas, D. Onural, M.A. Popović. 2021. "Rapid Adiabatic 3 dB Coupler with 50±1% Splitting Over 200 nm including S, C and L Bands in 45 nm CMOS Platform." Frontiers in Optics + Laser Science 2021. Frontiers in Optics. 2021 - https://doi.org/10.1364/fio.2021.ftu6b.2https://hdl.handle.net/2144/45164We demonstrate a 70 µm-long silicon rapid adiabatic coupler (RAC) with <0.07 dB insertion loss over 50 nm and power splitting ratio 50 ± 1% over 200 nm bandwidth fabricated in the commercial 45RF ‘zero change’ CMOS electronics-photonics platform.en-US© 2021 The Author(s).Rapid adiabatic 3 dB coupler with 50±1% splitting over 200 nm including S, C and L bands in 45 nm CMOS platformConference materials10.1364/fio.2021.ftu6b.2743234