Channel-width dependent enhancement in nanoscale field effect transistor
Files
Published version
Date
2008-02-15
DOI
Authors
Wang, Xihua
Chen, Yu
Hong, Mi K.
Erramilli, Shyamsunder
Mohanty, Pritiraj
Version
OA Version
Citation
Xihua Wang, Yu Chen, Mi K Hong, Shyamsunder Erramilli, Pritiraj Mohanty. "Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor."
Abstract
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Due to increased surface-to-volume ratio, these devices show higher transconductance per unit width at smaller width. Our devices with nanoscale channel width demonstrate extreme sensitivity to surface field profile, and therefore can be used as logic elements in computation and as ultrasensitive sensors of surface-charge in chemical and biological species.