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dc.contributor.authorWang, Xihuaen_US
dc.contributor.authorChen, Yuen_US
dc.contributor.authorHong, Mi K.en_US
dc.contributor.authorErramilli, Shyamsunderen_US
dc.contributor.authorMohanty, Pritirajen_US
dc.date.accessioned2018-04-12T19:47:53Z
dc.date.available2018-04-12T19:47:53Z
dc.date.issued2008-02-15
dc.identifierhttp://arxiv.org/abs/0802.2140v1
dc.identifier.citationXihua Wang, Yu Chen, Mi K Hong, Shyamsunder Erramilli, Pritiraj Mohanty. "Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor."
dc.identifier.urihttps://hdl.handle.net/2144/28286
dc.description.abstractWe report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Due to increased surface-to-volume ratio, these devices show higher transconductance per unit width at smaller width. Our devices with nanoscale channel width demonstrate extreme sensitivity to surface field profile, and therefore can be used as logic elements in computation and as ultrasensitive sensors of surface-charge in chemical and biological species.en_US
dc.subjectOther condensed matteren_US
dc.subjectMaterials scienceen_US
dc.titleChannel-width dependent enhancement in nanoscale field effect transistoren_US
dc.typeArticleen_US
pubs.elements-sourcearxiven_US
pubs.notes5 pages, 4 figures, two-column format. Related papers can be found at http://nano.bu.eduen_US
pubs.notesEmbargo: Not knownen_US
pubs.organisational-groupBoston Universityen_US
pubs.organisational-groupBoston University, College of Arts & Sciencesen_US
pubs.organisational-groupBoston University, College of Arts & Sciences, Department of Physicsen_US
dc.identifier.orcid0000-0003-3950-9122 (Erramilli, Shyamsunder)


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