Broadband repeatable <0.025 dB average loss rapid adiabatic based 3-dB coupler in a 45 nm SOI CMOS process
Files
Accepted manuscript
Date
2021
Authors
Fargas Cabanillas, Josep M.
Bappi, Golam
Kita, Derek M.
Van Orden, Derek
Khilo, Anatol
Sedgwick, Forrest
Fini, John
Popović, Miloš A.
Wade, Mark T.
Version
Accepted manuscript
OA Version
Citation
J.M. Fargas Cabanillas, G. Bappi, D.M. Kita, D. Van Orden, A. Khilo, F. Sedgwick, J. Fini, M.A. Popović, M.T. Wade. 2021. "Broadband Repeatable <0.025 dB Average Loss Rapid Adiabatic Based 3-dB Coupler in a 45 nm SOI CMOS Process." OSA Advanced Photonics Congress 2021. Integrated Photonics Research, Silicon and Nanophotonics. 2021 - https://doi.org/10.1364/iprsn.2021.jth3a.3
Abstract
We demonstrate a 75 µm-long rapid adiabatic coupler (RAC) with an average insertion loss <0.025 dB/coupler and an average power splitting ratio of 50±1.09% over 40 nm bandwidth and 68 reticles across a 300 mm 45 nm SOI CMOS wafer.
Description
License
© 2021 The Author(s).