Rapid adiabatic 3 dB coupler with 50±1% splitting over 200 nm including S, C and L bands in 45 nm CMOS platform
Files
Accepted manuscript
Date
2021
Authors
Fargas Cabanillas, Josep M.
Onural, Deniz
Popović, Miloš A.
Version
Accepted manuscript
OA Version
Citation
J.M.F. Cabanillas, D. Onural, M.A. Popović. 2021. "Rapid Adiabatic 3 dB Coupler with 50±1% Splitting Over 200 nm including S, C and L Bands in 45 nm CMOS Platform." Frontiers in Optics + Laser Science 2021. Frontiers in Optics. 2021 - https://doi.org/10.1364/fio.2021.ftu6b.2
Abstract
We demonstrate a 70 µm-long silicon rapid adiabatic coupler (RAC) with <0.07 dB insertion loss over 50 nm and power splitting ratio 50 ± 1% over 200 nm bandwidth fabricated in the commercial 45RF ‘zero change’ CMOS electronics-photonics platform.
Description
License
© 2021 The Author(s).