Memory effects in monolayer group-IV monochalcoginides
Files
Published version
Date
2016
Authors
Hanakata, Paul Z.
Carvalho, Alexandra
Campbell, David K.
Park, Harold S.
Version
Published version
OA Version
Citation
Paul Z Hanakata, Alexandra Carvalho, D. Campbell, Harold S Park. 2016. "Memory Effects in Monolayer Group-IV Monochalcoginides." Physical review B: Condensed matter and materials physics, Volume 94, https://doi.org/10.1103/PhysRevB.94.035304
Abstract
Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic
structure that is comprised of polar layers. In this article, we use first principles calculations to show the
multistability of monolayer SnS and GeSe, two prototype materials where the direction of the puckering can be
switched by application of tensile stress or electric field. Furthermore, the two inequivalent valleys in momentum
space, which are dictated by the puckering orientation, can be excited selectively using linearly polarized light,
and this provides an additional tool to identify the polarization direction. Our findings suggest that SnS and GeSe
monolayers may have observable ferroelectricity and multistability, with potential applications in information
storage.
Description
License
©2016 American Physical Society.